Links Category: Ferroelectricity

due to its unexpected nanoscale ferroelectricity and great advantage of complementary metal oxide semiconductor (CMOS) compatibility which allows the wide …

Corporate Research and Chief Technology Office, Taiwan Semiconductor Manufacturing … In2Se3 possesses piezoelectricity and ferroelectricity in both in-.

been shown to produce ferroelectricity in the HfO2 films [5–8]. Fer- roelectricity can … with the TiN-HZO-Ge metal-ferroelectric-semiconductor (MFS) capa- citor.

… region formed at the ferroelectric/semiconductor interface. The optimized HZO-based FTJ with a Ge bottom electrode presents excellent ferroelectricity with a.

inconsistent with ferroelectricity. … of the ferroelectricity in ultrathin HfO2. … Microelectronics Program (a Semiconductor Research Corporation program …

Ferroelectricity is defined as the property of a material, with two characteristics, … semiconductor-based model, with a charge distribution in the ferroelectric,.

ferromagnetism and driven ferroelectricity in the monolayer and even a few-layers … the first-principles analysis of a new 2D semiconductor material CuCrP2S6.

Certainly no ferroelectricity can be possible although the … compressive strain can trigger the semiconductor to half-metal transitions accompanying the A-AFM …

semiconductor process. However, methods to obtain thicker HfO2 thin films with strong ferroelectricity have yet to be explored. In this work, a 50 nm-thick …

Out-of-plane ferroelectricity with a high transition temperature in nanometer-scale films is … semiconductor tunnel junctions by engineering the Schottky barrier.