compounds with III-V semiconductors for semiconductor spintronics device physics … Measurement of spin transport at Heusler/III-V semiconductor interfaces.
Links Category: Spin Transport
A brief review of ferroelectric control of magnetoresistance in …
Control of spin transport using ferroelectric interfaces . … [12,13]. 2) If the spacer is a thick semiconductor, the two FM layers are magnetically decoupled and the …
Electronic Spin Transport and Thermoelectric Effects in … – Core
Throughout the last 50 years, progress in the semiconductor and information storage industry was mainly due to a miniaturization of the transistors and integrated …
Spin Transport and Dynamics in Magnetic Heterostructures …
of spin transport in materials currently used in the semiconductor industry for potential spin-based applications. Recently, a surge of interest in spin transport in …
1543 KB – OSA Publishing
Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor … information concerning the parameters that characterize spin transport and spin- …
Drift-diffusion model for spin-polarized transport in a non …
Detailed examination of a spin transport problem in semiconductor structures is required for modeling of realistic processes in such devices. In this work we study …
Spin Seebeck effect and related phenomena in functional …
… conductivity mismatch, promote spin transport, and tune the spin mixing conductance (G) at the YIG/Pt interface, we have deposited an organic semiconductor …
Correlation between spin transport signal and Heusler …
We show a direct evidence for the impact of Heusler/semiconductor interfaces atomic structure on the spin transport signals in semiconductor-based lateral spin- …
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Spin-orbit coupling (SOC) in low-dimensional semiconductor systems has received … spin transport regime at high densities, two essential requirements for …
Non-equilibrium Green’s Function Methods for Spin Transport …
Spin Transport and Dynamics. Ivan Rungger, Andrea … and their charge- and spin-transport properties. … al/semiconductor/metal junctions having a lower MR.