high-j erbium oxide metal–oxide–semiconductor capacitors … CMOS technology utilizes HfO2 based gate dielectric with … 3J. Robertson, Eur. Phys. J. Appl. Phys. 28, 265 (2004). 4E. R. Hsieh, Y. D. Wang, S. S. Chung, J. C. Ke, C. W. Yang, …
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